STMicroelectronics - STGYA120M65DF2AG

KEY Part #: K6422355

STGYA120M65DF2AG Pricing (USD) [12284PC Stock]

  • 1 pcs$3.35483

Nimewo Pati:
STGYA120M65DF2AG
Manifakti:
STMicroelectronics
Detaye deskripsyon:
IGBT.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Tiristors - TRIACs, Diodes - Rèkteur - Single, Transistors - IGBTs - Single, Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - DIACs, SIDACs and Diodes - Varyab kapasite (Varicaps, Varactors) ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STGYA120M65DF2AG Atribi pwodwi yo

Nimewo Pati : STGYA120M65DF2AG
Manifakti : STMicroelectronics
Deskripsyon : IGBT
Seri : M
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 650V
Kouran - Pèseptè (Ic) (Max) : 160A
Kouran - Pèseptè batman (Icm) : 360A
Vce (sou) (Max) @ Vge, Ic : 2.15V @ 15V, 120A
Pouvwa - Max : 625W
Oblije chanje enèji : 1.8mJ (on), 4.41mJ (off)
Kalite Antre : Standard
Gate chaje : 420nC
Td (on / off) @ 25 ° C : 66ns/185ns
Kondisyon egzamen an : 400V, 120A, 4.7 Ohm, 15V
Ranvèse Tan Reverse (trr) : 202ns
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : MAX247™