ON Semiconductor - NGTB20N120IHWG

KEY Part #: K6423575

NGTB20N120IHWG Pricing (USD) [9606PC Stock]

  • 210 pcs$1.49788

Nimewo Pati:
NGTB20N120IHWG
Manifakti:
ON Semiconductor
Detaye deskripsyon:
IGBT 20A 1200V TO-247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Single, Tiristors - DIACs, SIDACs, Diodes - Zener - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR - Modil yo and Diodes - Zener - Single ...
Avantaj konpetitif:
We specialize in ON Semiconductor NGTB20N120IHWG electronic components. NGTB20N120IHWG can be shipped within 24 hours after order. If you have any demands for NGTB20N120IHWG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NGTB20N120IHWG Atribi pwodwi yo

Nimewo Pati : NGTB20N120IHWG
Manifakti : ON Semiconductor
Deskripsyon : IGBT 20A 1200V TO-247
Seri : -
Estati Pati : Last Time Buy
Kalite IGBT : Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 40A
Kouran - Pèseptè batman (Icm) : 80A
Vce (sou) (Max) @ Vge, Ic : 2.65V @ 15V, 20A
Pouvwa - Max : 341W
Oblije chanje enèji : 480µJ (off)
Kalite Antre : Standard
Gate chaje : 150nC
Td (on / off) @ 25 ° C : -/170ns
Kondisyon egzamen an : 600V, 20A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -40°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : TO-247-3