Infineon Technologies - IRGB5B120KDPBF

KEY Part #: K6424483

IRGB5B120KDPBF Pricing (USD) [9293PC Stock]

  • 1 pcs$1.40143
  • 10 pcs$1.25732
  • 100 pcs$0.97727
  • 500 pcs$0.83194
  • 1,000 pcs$0.70163

Nimewo Pati:
IRGB5B120KDPBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
IGBT 1200V 12A 89W TO220AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Single, Diodes - Bridge rèktifikateur, Diodes - Rèkteur - Arrays, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - RF, Modil pouvwa chofè and Transistors - FETs, MOSFETs - RF ...
Avantaj konpetitif:
We specialize in Infineon Technologies IRGB5B120KDPBF electronic components. IRGB5B120KDPBF can be shipped within 24 hours after order. If you have any demands for IRGB5B120KDPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRGB5B120KDPBF Atribi pwodwi yo

Nimewo Pati : IRGB5B120KDPBF
Manifakti : Infineon Technologies
Deskripsyon : IGBT 1200V 12A 89W TO220AB
Seri : -
Estati Pati : Obsolete
Kalite IGBT : NPT
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 12A
Kouran - Pèseptè batman (Icm) : 24A
Vce (sou) (Max) @ Vge, Ic : 3V @ 15V, 6A
Pouvwa - Max : 89W
Oblije chanje enèji : 390µJ (on), 330µJ (off)
Kalite Antre : Standard
Gate chaje : 25nC
Td (on / off) @ 25 ° C : 22ns/100ns
Kondisyon egzamen an : 600V, 6A, 50 Ohm, 15V
Ranvèse Tan Reverse (trr) : 160ns
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-220-3
Pake Aparèy Founisè : TO-220AB