RT1C060UNTR Pricing (USD) [628503PC Stock]
- 1 pcs$0.06506
- 3,000 pcs$0.06474
- Nimewo Pati:
- RT1C060UNTR
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 20V 6A TSST8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Single, Transistors - Pwogramasyon Unijunction, Tiristors - SCR, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Single and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor RT1C060UNTR electronic components. RT1C060UNTR can be shipped within 24 hours after order. If you have any demands for RT1C060UNTR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RT1C060UNTR Atribi pwodwi yo
Nimewo Pati :
RT1C060UNTR
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET N-CH 20V 6A TSST8
Seri :
-
Estati Pati :
Not For New Designs
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.5V, 4.5V
RD sou (Max) @ Id, Vgs :
28 mOhm @ 6A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
11nC @ 4.5V
Vgs (Max) :
±10V
Antre kapasite (Ciss) (Max) @ Vds :
870pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
650mW (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-TSST
Pake / Ka :
8-SMD, Flat Lead
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