Manifakti :
Texas Instruments
Deskripsyon :
MOSFET 2N-CH 30V 25A 5PTAB
FET Kalite :
2 N-Channel (Half Bridge)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
25A
RD sou (Max) @ Id, Vgs :
9.6 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id :
1.9V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
4.1nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
736pF @ 15V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
5-PTAB (3x2.5)