IXFN180N25T Pricing (USD) [4999PC Stock]
- 1 pcs$9.09921
- 10 pcs$8.26990
- 25 pcs$7.27649
- 100 pcs$6.68652
- 250 pcs$6.09654
- 500 pcs$5.70321
- Nimewo Pati:
- IXFN180N25T
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 250V 168A SOT-227.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Zener - Single, Modil pouvwa chofè, Transistors - IGBTs - Single, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - Arrays and Transistors - IGBTs - Arrays ...
- Avantaj konpetitif:
- We specialize in IXYS IXFN180N25T electronic components. IXFN180N25T can be shipped within 24 hours after order. If you have any demands for IXFN180N25T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFN180N25T Atribi pwodwi yo
Nimewo Pati :
IXFN180N25T
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 250V 168A SOT-227
Seri :
GigaMOS™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
250V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
168A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
12.9 mOhm @ 60A, 10V
Vgs (th) (Max) @ Id :
5V @ 8mA
Chaje Gate (Qg) (Max) @ Vgs :
345nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
28000pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
900W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
SOT-227B
Pake / Ka :
SOT-227-4, miniBLOC
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