STMicroelectronics - STW11NK100Z

KEY Part #: K6414401

STW11NK100Z Pricing (USD) [12970PC Stock]

  • 1 pcs$2.99235
  • 10 pcs$2.67240
  • 100 pcs$2.19129
  • 500 pcs$1.77441
  • 1,000 pcs$1.49648

Nimewo Pati:
STW11NK100Z
Manifakti:
STMicroelectronics
Detaye deskripsyon:
MOSFET N-CH 1KV 8.3A TO-247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - TRIACs, Transistors - Objektif espesyal, Diodes - Bridge rèktifikateur, Tiristors - SCR, Diodes - Zener - Arrays, Transistors - Pwogramasyon Unijunction and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STW11NK100Z Atribi pwodwi yo

Nimewo Pati : STW11NK100Z
Manifakti : STMicroelectronics
Deskripsyon : MOSFET N-CH 1KV 8.3A TO-247
Seri : SuperMESH™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8.3A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 1.38 Ohm @ 4.15A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs : 162nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 3500pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 230W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247-3
Pake / Ka : TO-247-3