PMPB20XNEAX Pricing (USD) [382688PC Stock]
- 1 pcs$0.09665
- 3,000 pcs$0.08429
- Nimewo Pati:
- PMPB20XNEAX
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 20V SOT1220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Tiristors - SCR, Modil pouvwa chofè, Diodes - Zener - Arrays, Diodes - RF, Transistors - FETs, MOSFETs - RF, Diodes - Varyab kapasite (Varicaps, Varactors) and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PMPB20XNEAX electronic components. PMPB20XNEAX can be shipped within 24 hours after order. If you have any demands for PMPB20XNEAX, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMPB20XNEAX Atribi pwodwi yo
Nimewo Pati :
PMPB20XNEAX
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET N-CH 20V SOT1220
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
7.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
20 mOhm @ 7.5A, 4.5V
Vgs (th) (Max) @ Id :
1.25V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
15nC @ 4.5V
Vgs (Max) :
±12V
Antre kapasite (Ciss) (Max) @ Vds :
930pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
460mW (Ta), 12.5W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DFN2020MD-6
Pake / Ka :
6-UDFN Exposed Pad
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