Nexperia USA Inc. - PMPB20XNEAX

KEY Part #: K6421184

PMPB20XNEAX Pricing (USD) [382688PC Stock]

  • 1 pcs$0.09665
  • 3,000 pcs$0.08429

Nimewo Pati:
PMPB20XNEAX
Manifakti:
Nexperia USA Inc.
Detaye deskripsyon:
MOSFET N-CH 20V SOT1220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Single, Transistors - Objektif espesyal and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PMPB20XNEAX Atribi pwodwi yo

Nimewo Pati : PMPB20XNEAX
Manifakti : Nexperia USA Inc.
Deskripsyon : MOSFET N-CH 20V SOT1220
Seri : Automotive, AEC-Q101
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V
RD sou (Max) @ Id, Vgs : 20 mOhm @ 7.5A, 4.5V
Vgs (th) (Max) @ Id : 1.25V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 15nC @ 4.5V
Vgs (Max) : ±12V
Antre kapasite (Ciss) (Max) @ Vds : 930pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 460mW (Ta), 12.5W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : DFN2020MD-6
Pake / Ka : 6-UDFN Exposed Pad