MGSF2N02ELT1G Pricing (USD) [709247PC Stock]
- 1 pcs$0.05663
- 3,000 pcs$0.05635
- Nimewo Pati:
- MGSF2N02ELT1G
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 20V 2.8A SOT-23.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Single, Tiristors - SCR, Transistors - Pwogramasyon Unijunction and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor MGSF2N02ELT1G electronic components. MGSF2N02ELT1G can be shipped within 24 hours after order. If you have any demands for MGSF2N02ELT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
MGSF2N02ELT1G Atribi pwodwi yo
Nimewo Pati :
MGSF2N02ELT1G
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 20V 2.8A SOT-23
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.8A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
85 mOhm @ 3.6A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
3.5nC @ 4V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
150pF @ 5V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.25W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-23-3 (TO-236)
Pake / Ka :
TO-236-3, SC-59, SOT-23-3
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