Vishay Siliconix - SQJA34EP-T1_GE3

KEY Part #: K6420269

SQJA34EP-T1_GE3 Pricing (USD) [176985PC Stock]

  • 1 pcs$0.20899

Nimewo Pati:
SQJA34EP-T1_GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CH 40V 75A POWERPAKSOL.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Arrays, Transistors - Pwogramasyon Unijunction, Tiristors - SCR - Modil yo, Diodes - Zener - Arrays and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SQJA34EP-T1_GE3 electronic components. SQJA34EP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJA34EP-T1_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQJA34EP-T1_GE3 Atribi pwodwi yo

Nimewo Pati : SQJA34EP-T1_GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CH 40V 75A POWERPAKSOL
Seri : Automotive, AEC-Q101, TrenchFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 75A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 4.3 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 50nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2800pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 68W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PowerPAK® SO-8
Pake / Ka : PowerPAK® SO-8