Vishay Siliconix - IRF634L

KEY Part #: K6414490

[12737PC Stock]


    Nimewo Pati:
    IRF634L
    Manifakti:
    Vishay Siliconix
    Detaye deskripsyon:
    MOSFET N-CH 250V 8.1A TO-262.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Bridge rèktifikateur, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - Single, Transistors - JFETs, Transistors - Bipolè (BJT) - Single, Tiristors - SCR and Diodes - Varyab kapasite (Varicaps, Varactors) ...
    Avantaj konpetitif:
    We specialize in Vishay Siliconix IRF634L electronic components. IRF634L can be shipped within 24 hours after order. If you have any demands for IRF634L, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRF634L Atribi pwodwi yo

    Nimewo Pati : IRF634L
    Manifakti : Vishay Siliconix
    Deskripsyon : MOSFET N-CH 250V 8.1A TO-262
    Seri : -
    Estati Pati : Active
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 250V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8.1A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 450 mOhm @ 5.1A, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 41nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 770pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : -
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : I2PAK
    Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA