ON Semiconductor - NGTB40N60L2WG

KEY Part #: K6422549

NGTB40N60L2WG Pricing (USD) [14796PC Stock]

  • 1 pcs$2.78522
  • 150 pcs$2.04829

Nimewo Pati:
NGTB40N60L2WG
Manifakti:
ON Semiconductor
Detaye deskripsyon:
IGBT 600V 80A 417W TO247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Transistors - JFETs, Transistors - FETs, MOSFETs - Single, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Single, Transistors - IGBTs - Modil yo and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
We specialize in ON Semiconductor NGTB40N60L2WG electronic components. NGTB40N60L2WG can be shipped within 24 hours after order. If you have any demands for NGTB40N60L2WG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NGTB40N60L2WG Atribi pwodwi yo

Nimewo Pati : NGTB40N60L2WG
Manifakti : ON Semiconductor
Deskripsyon : IGBT 600V 80A 417W TO247
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 80A
Kouran - Pèseptè batman (Icm) : 160A
Vce (sou) (Max) @ Vge, Ic : 2.61V @ 15V, 40A
Pouvwa - Max : 417W
Oblije chanje enèji : 1.17mJ (on), 280µJ (off)
Kalite Antre : Standard
Gate chaje : 228nC
Td (on / off) @ 25 ° C : 98ns/213ns
Kondisyon egzamen an : 400V, 40A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) : 73ns
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : TO-247