Vishay Semiconductor Diodes Division - VS-HFA30PB120-N3

KEY Part #: K6441701

VS-HFA30PB120-N3 Pricing (USD) [7639PC Stock]

  • 1 pcs$5.66299
  • 10 pcs$5.20334
  • 25 pcs$4.98784
  • 100 pcs$4.39470
  • 250 pcs$4.17900
  • 500 pcs$3.90938

Nimewo Pati:
VS-HFA30PB120-N3
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 1.2KV 30A TO247AC. Rectifiers 30A 1200V Ultrafast 47ns HEXFRED
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division VS-HFA30PB120-N3 electronic components. VS-HFA30PB120-N3 can be shipped within 24 hours after order. If you have any demands for VS-HFA30PB120-N3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-HFA30PB120-N3 Atribi pwodwi yo

Nimewo Pati : VS-HFA30PB120-N3
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 1.2KV 30A TO247AC
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 1200V
Kouran - Mwayèn Rèktifye (Io) : 30A
Voltage - Forward (Vf) (Max) @ Si : 4.1V @ 30A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 170ns
Kouran - Fèy Reverse @ Vr : 40µA @ 1200V
Kapasite @ Vr, F : -
Mounting Kalite : Through Hole
Pake / Ka : TO-247-2
Pake Aparèy Founisè : TO-247AC Modified
Operating Tanperati - Junction : -55°C ~ 150°C

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