PHB21N06LT,118 Pricing (USD) [244627PC Stock]
- 1 pcs$0.15196
- 800 pcs$0.15120
- Nimewo Pati:
- PHB21N06LT,118
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 55V 19A D2PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Diodes - RF, Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Arrays, Diodes - Bridge rèktifikateur, Tiristors - DIACs, SIDACs, Transistors - JFETs and Diodes - Rèkteur - Single ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PHB21N06LT,118 electronic components. PHB21N06LT,118 can be shipped within 24 hours after order. If you have any demands for PHB21N06LT,118, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PHB21N06LT,118 Atribi pwodwi yo
Nimewo Pati :
PHB21N06LT,118
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET N-CH 55V 19A D2PAK
Seri :
TrenchMOS™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
55V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
19A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
5V, 10V
RD sou (Max) @ Id, Vgs :
70 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
9.4nC @ 5V
Vgs (Max) :
±15V
Antre kapasite (Ciss) (Max) @ Vds :
650pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
56W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D2PAK
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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