RSJ10HN06TL Pricing (USD) [29687PC Stock]
- 1 pcs$1.53466
- 1,000 pcs$1.52703
- Nimewo Pati:
- RSJ10HN06TL
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 60V 100A LPTS.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - TRIACs, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor RSJ10HN06TL electronic components. RSJ10HN06TL can be shipped within 24 hours after order. If you have any demands for RSJ10HN06TL, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RSJ10HN06TL Atribi pwodwi yo
Nimewo Pati :
RSJ10HN06TL
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET N-CH 60V 100A LPTS
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
100A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4V, 10V
RD sou (Max) @ Id, Vgs :
4.2 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
202nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
11000pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
100W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
LPTS
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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