Infineon Technologies - IPU039N03LGXK

KEY Part #: K6398516

IPU039N03LGXK Pricing (USD) [67768PC Stock]

  • 1 pcs$0.57698
  • 10 pcs$0.51217
  • 100 pcs$0.40472

Nimewo Pati:
IPU039N03LGXK
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 30V 50A IPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR, Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Single, Diodes - Zener - Single and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPU039N03LGXK Atribi pwodwi yo

Nimewo Pati : IPU039N03LGXK
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 30V 50A IPAK
Seri : OptiMOS™
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 50A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 3.9 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 51nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 5300pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 94W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PG-TO251-3
Pake / Ka : TO-251-3 Short Leads, IPak, TO-251AA

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