[12105PC Stock]
- Nimewo Pati:
- TSM2301BCX RFG
- Manifakti:
- Taiwan Semiconductor Corporation
- Detaye deskripsyon:
- MOSFET P-CHANNEL 20V 2.8A SOT23.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays, Tiristors - TRIACs, Diodes - RF, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in Taiwan Semiconductor Corporation TSM2301BCX RFG electronic components. TSM2301BCX RFG can be shipped within 24 hours after order. If you have any demands for TSM2301BCX RFG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM2301BCX RFG Atribi pwodwi yo
Nimewo Pati :
TSM2301BCX RFG
Manifakti :
Taiwan Semiconductor Corporation
Deskripsyon :
MOSFET P-CHANNEL 20V 2.8A SOT23
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.8A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 4.5V
RD sou (Max) @ Id, Vgs :
100 mOhm @ 2.8A, 4.5V
Vgs (th) (Max) @ Id :
950mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
4.5nC @ 4.5V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
415pF @ 6V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
900mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-23
Pake / Ka :
TO-236-3, SC-59, SOT-23-3
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