STMicroelectronics - STGB30H60DF

KEY Part #: K6423594

STGB30H60DF Pricing (USD) [9599PC Stock]

  • 1,000 pcs$1.26327

Nimewo Pati:
STGB30H60DF
Manifakti:
STMicroelectronics
Detaye deskripsyon:
IGBT 600V 60A 260W D2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Modil pouvwa chofè, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Single and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
We specialize in STMicroelectronics STGB30H60DF electronic components. STGB30H60DF can be shipped within 24 hours after order. If you have any demands for STGB30H60DF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STGB30H60DF Atribi pwodwi yo

Nimewo Pati : STGB30H60DF
Manifakti : STMicroelectronics
Deskripsyon : IGBT 600V 60A 260W D2PAK
Seri : -
Estati Pati : Obsolete
Kalite IGBT : Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 60A
Kouran - Pèseptè batman (Icm) : 120A
Vce (sou) (Max) @ Vge, Ic : 2.4V @ 15V, 30A
Pouvwa - Max : 260W
Oblije chanje enèji : 350µJ (on), 400µJ (off)
Kalite Antre : Standard
Gate chaje : 105nC
Td (on / off) @ 25 ° C : 50ns/160ns
Kondisyon egzamen an : 400V, 30A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) : 110ns
Operating Tanperati : -40°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè : D2PAK