[12477PC Stock]
- Nimewo Pati:
- PSMN023-80LS,115
- Manifakti:
- NXP USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 80V 34A QFN3333.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Tiristors - SCR - Modil yo, Transistors - Objektif espesyal, Diodes - Zener - Single, Tiristors - TRIACs, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - RF and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in NXP USA Inc. PSMN023-80LS,115 electronic components. PSMN023-80LS,115 can be shipped within 24 hours after order. If you have any demands for PSMN023-80LS,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PSMN023-80LS,115 Atribi pwodwi yo
Nimewo Pati :
PSMN023-80LS,115
Manifakti :
NXP USA Inc.
Deskripsyon :
MOSFET N-CH 80V 34A QFN3333
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
80V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
34A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
23 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
21nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1295pF @ 40V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
65W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-DFN3333 (3.3x3.3)
Pake / Ka :
8-VDFN Exposed Pad
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