Infineon Technologies - IPD200N15N3GBTMA1

KEY Part #: K6406818

[1188PC Stock]


    Nimewo Pati:
    IPD200N15N3GBTMA1
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    MOSFET N-CH 150V 50A TO252-3.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Tiristors - SCR - Modil yo, Transistors - Objektif espesyal, Tiristors - SCR, Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Arrays and Diodes - Bridge rèktifikateur ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies IPD200N15N3GBTMA1 electronic components. IPD200N15N3GBTMA1 can be shipped within 24 hours after order. If you have any demands for IPD200N15N3GBTMA1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IPD200N15N3GBTMA1 Atribi pwodwi yo

    Nimewo Pati : IPD200N15N3GBTMA1
    Manifakti : Infineon Technologies
    Deskripsyon : MOSFET N-CH 150V 50A TO252-3
    Seri : OptiMOS™
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 150V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 50A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 8V, 10V
    RD sou (Max) @ Id, Vgs : 20 mOhm @ 50A, 10V
    Vgs (th) (Max) @ Id : 4V @ 90µA
    Chaje Gate (Qg) (Max) @ Vgs : 31nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 1820pF @ 75V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 150W (Tc)
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : PG-TO252-3
    Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63