IXTN30N100L Pricing (USD) [1716PC Stock]
- 1 pcs$26.47759
- 10 pcs$24.75922
- 25 pcs$22.89888
- 100 pcs$21.46770
- Nimewo Pati:
- IXTN30N100L
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 1000V 30A SOT-227.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR, Diodes - Bridge rèktifikateur, Tiristors - SCR - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - Objektif espesyal ...
- Avantaj konpetitif:
- We specialize in IXYS IXTN30N100L electronic components. IXTN30N100L can be shipped within 24 hours after order. If you have any demands for IXTN30N100L, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTN30N100L Atribi pwodwi yo
Nimewo Pati :
IXTN30N100L
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 1000V 30A SOT-227
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
30A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
20V
RD sou (Max) @ Id, Vgs :
450 mOhm @ 15A, 20V
Vgs (th) (Max) @ Id :
5.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
545nC @ 20V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
13700pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
800W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
SOT-227B
Pake / Ka :
SOT-227-4, miniBLOC
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