IXYS - IXTN30N100L

KEY Part #: K6393553

IXTN30N100L Pricing (USD) [1716PC Stock]

  • 1 pcs$26.47759
  • 10 pcs$24.75922
  • 25 pcs$22.89888
  • 100 pcs$21.46770

Nimewo Pati:
IXTN30N100L
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 1000V 30A SOT-227.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Diodes - RF, Transistors - JFETs, Diodes - Rèkteur - Arrays, Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors) and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in IXYS IXTN30N100L electronic components. IXTN30N100L can be shipped within 24 hours after order. If you have any demands for IXTN30N100L, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTN30N100L Atribi pwodwi yo

Nimewo Pati : IXTN30N100L
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 1000V 30A SOT-227
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 30A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 20V
RD sou (Max) @ Id, Vgs : 450 mOhm @ 15A, 20V
Vgs (th) (Max) @ Id : 5.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 545nC @ 20V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 13700pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 800W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake Aparèy Founisè : SOT-227B
Pake / Ka : SOT-227-4, miniBLOC