RS1E200BNTB Pricing (USD) [494560PC Stock]
- 1 pcs$0.08268
- 2,500 pcs$0.08227
- Nimewo Pati:
- RS1E200BNTB
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 30V 20A 8HSOP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Single, Transistors - Pwogramasyon Unijunction, Diodes - Bridge rèktifikateur, Tiristors - SCR, Diodes - RF, Tiristors - TRIACs and Transistors - Objektif espesyal ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor RS1E200BNTB electronic components. RS1E200BNTB can be shipped within 24 hours after order. If you have any demands for RS1E200BNTB, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RS1E200BNTB Atribi pwodwi yo
Nimewo Pati :
RS1E200BNTB
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET N-CH 30V 20A 8HSOP
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
20A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
3.9 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
59nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
3100pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
3W (Ta), 25W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-HSOP
Pake / Ka :
8-PowerTDFN
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