[9435PC Stock]
- Nimewo Pati:
- GT60N321(Q)
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- IGBT 1000V 60A 170W TO3P LH.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Single and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage GT60N321(Q) electronic components. GT60N321(Q) can be shipped within 24 hours after order. If you have any demands for GT60N321(Q), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
GT60N321(Q) Atribi pwodwi yo
Nimewo Pati :
GT60N321(Q)
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
IGBT 1000V 60A 170W TO3P LH
Seri :
-
Estati Pati :
Obsolete
Kalite IGBT :
-
Voltage - Pèseptè ki emèt deba (Max) :
1000V
Kouran - Pèseptè (Ic) (Max) :
60A
Kouran - Pèseptè batman (Icm) :
120A
Vce (sou) (Max) @ Vge, Ic :
2.8V @ 15V, 60A
Pouvwa - Max :
170W
Oblije chanje enèji :
-
Kalite Antre :
Standard
Gate chaje :
-
Td (on / off) @ 25 ° C :
330ns/700ns
Kondisyon egzamen an :
-
Ranvèse Tan Reverse (trr) :
2.5µs
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-3PL
Pake Aparèy Founisè :
TO-3P(LH)
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