Toshiba Semiconductor and Storage - GT60N321(Q)

KEY Part #: K6424070

[9435PC Stock]


    Nimewo Pati:
    GT60N321(Q)
    Manifakti:
    Toshiba Semiconductor and Storage
    Detaye deskripsyon:
    IGBT 1000V 60A 170W TO3P LH.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Single, Transistors - IGBTs - Single, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - RF, Tiristors - TRIACs and Diodes - Rèkteur - Single ...
    Avantaj konpetitif:
    We specialize in Toshiba Semiconductor and Storage GT60N321(Q) electronic components. GT60N321(Q) can be shipped within 24 hours after order. If you have any demands for GT60N321(Q), Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    GT60N321(Q) Atribi pwodwi yo

    Nimewo Pati : GT60N321(Q)
    Manifakti : Toshiba Semiconductor and Storage
    Deskripsyon : IGBT 1000V 60A 170W TO3P LH
    Seri : -
    Estati Pati : Obsolete
    Kalite IGBT : -
    Voltage - Pèseptè ki emèt deba (Max) : 1000V
    Kouran - Pèseptè (Ic) (Max) : 60A
    Kouran - Pèseptè batman (Icm) : 120A
    Vce (sou) (Max) @ Vge, Ic : 2.8V @ 15V, 60A
    Pouvwa - Max : 170W
    Oblije chanje enèji : -
    Kalite Antre : Standard
    Gate chaje : -
    Td (on / off) @ 25 ° C : 330ns/700ns
    Kondisyon egzamen an : -
    Ranvèse Tan Reverse (trr) : 2.5µs
    Operating Tanperati : 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake / Ka : TO-3PL
    Pake Aparèy Founisè : TO-3P(LH)