Infineon Technologies - IRG4BC10SD-LPBF

KEY Part #: K6424437

[9309PC Stock]


    Nimewo Pati:
    IRG4BC10SD-LPBF
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    IGBT 600V 14A 38W TO262.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - RF, Transistors - Pwogramasyon Unijunction and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies IRG4BC10SD-LPBF electronic components. IRG4BC10SD-LPBF can be shipped within 24 hours after order. If you have any demands for IRG4BC10SD-LPBF, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRG4BC10SD-LPBF Atribi pwodwi yo

    Nimewo Pati : IRG4BC10SD-LPBF
    Manifakti : Infineon Technologies
    Deskripsyon : IGBT 600V 14A 38W TO262
    Seri : -
    Estati Pati : Obsolete
    Kalite IGBT : -
    Voltage - Pèseptè ki emèt deba (Max) : 600V
    Kouran - Pèseptè (Ic) (Max) : 14A
    Kouran - Pèseptè batman (Icm) : 18A
    Vce (sou) (Max) @ Vge, Ic : 1.8V @ 15V, 8A
    Pouvwa - Max : 38W
    Oblije chanje enèji : 310µJ (on), 3.28mJ (off)
    Kalite Antre : Standard
    Gate chaje : 15nC
    Td (on / off) @ 25 ° C : 76ns/815ns
    Kondisyon egzamen an : 480V, 8A, 100 Ohm, 15V
    Ranvèse Tan Reverse (trr) : 28ns
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA
    Pake Aparèy Founisè : TO-262