Infineon Technologies - IRGB4630DPBF

KEY Part #: K6422628

IRGB4630DPBF Pricing (USD) [20920PC Stock]

  • 1 pcs$1.79365
  • 10 pcs$1.60988
  • 100 pcs$1.31902
  • 500 pcs$1.06529
  • 1,000 pcs$0.89843

Nimewo Pati:
IRGB4630DPBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
IGBT 600V 47A 206W TO220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Single, Transistors - Objektif espesyal, Tiristors - SCR, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Single, Transistors - JFETs and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
We specialize in Infineon Technologies IRGB4630DPBF electronic components. IRGB4630DPBF can be shipped within 24 hours after order. If you have any demands for IRGB4630DPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRGB4630DPBF Atribi pwodwi yo

Nimewo Pati : IRGB4630DPBF
Manifakti : Infineon Technologies
Deskripsyon : IGBT 600V 47A 206W TO220
Seri : -
Estati Pati : Active
Kalite IGBT : -
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 47A
Kouran - Pèseptè batman (Icm) : 54A
Vce (sou) (Max) @ Vge, Ic : 1.95V @ 15V, 18A
Pouvwa - Max : 206W
Oblije chanje enèji : 95µJ (on), 350µJ (off)
Kalite Antre : Standard
Gate chaje : 35nC
Td (on / off) @ 25 ° C : 40ns/105ns
Kondisyon egzamen an : 400V, 18A, 22 Ohm, 15V
Ranvèse Tan Reverse (trr) : 100ns
Operating Tanperati : -40°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-220-3
Pake Aparèy Founisè : TO-220AC