Nimewo Pati :
SSM6N67NU,LF
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
SMALL LOW RON DUAL NCH MOSFETS I
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate, 1.8V Drive
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4A (Ta)
RD sou (Max) @ Id, Vgs :
39.1 mOhm @ 2A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
3.2nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
310pF @ 15V
Operating Tanperati :
150°C
Mounting Kalite :
Surface Mount
Pake / Ka :
6-WDFN Exposed Pad
Pake Aparèy Founisè :
6-UDFN (2x2)