Infineon Technologies - IRF5801TRPBF

KEY Part #: K6421330

IRF5801TRPBF Pricing (USD) [459090PC Stock]

  • 1 pcs$0.08057
  • 3,000 pcs$0.06959

Nimewo Pati:
IRF5801TRPBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 200V 600MA 6-TSOP.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Tiristors - SCR - Modil yo, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - JFETs, Tiristors - DIACs, SIDACs, Tiristors - TRIACs and Transistors - IGBTs - Arrays ...
Avantaj konpetitif:
We specialize in Infineon Technologies IRF5801TRPBF electronic components. IRF5801TRPBF can be shipped within 24 hours after order. If you have any demands for IRF5801TRPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRF5801TRPBF Atribi pwodwi yo

Nimewo Pati : IRF5801TRPBF
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 200V 600MA 6-TSOP
Seri : HEXFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 600mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 2.2 Ohm @ 360mA, 10V
Vgs (th) (Max) @ Id : 5.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 3.9nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 88pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : Micro6™(TSOP-6)
Pake / Ka : SOT-23-6 Thin, TSOT-23-6

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