IRF5801TRPBF Pricing (USD) [459090PC Stock]
- 1 pcs$0.08057
- 3,000 pcs$0.06959
- Nimewo Pati:
- IRF5801TRPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 200V 600MA 6-TSOP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Arrays, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Bridge rèktifikateur, Diodes - Rèkteur - Single and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRF5801TRPBF electronic components. IRF5801TRPBF can be shipped within 24 hours after order. If you have any demands for IRF5801TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF5801TRPBF Atribi pwodwi yo
Nimewo Pati :
IRF5801TRPBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 200V 600MA 6-TSOP
Seri :
HEXFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
600mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
2.2 Ohm @ 360mA, 10V
Vgs (th) (Max) @ Id :
5.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
3.9nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
88pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
Micro6™(TSOP-6)
Pake / Ka :
SOT-23-6 Thin, TSOT-23-6
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