Infineon Technologies - IRLR8729TRLPBF

KEY Part #: K6421310

IRLR8729TRLPBF Pricing (USD) [436607PC Stock]

  • 1 pcs$0.08472
  • 3,000 pcs$0.07768

Nimewo Pati:
IRLR8729TRLPBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 30V 58A D-PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - RF, Tiristors - TRIACs, Transistors - FETs, MOSFETs - Single, Diodes - Rèkteur - Arrays, Transistors - Objektif espesyal and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRLR8729TRLPBF Atribi pwodwi yo

Nimewo Pati : IRLR8729TRLPBF
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 30V 58A D-PAK
Seri : HEXFET®
Estati Pati : Not For New Designs
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 58A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 8.9 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id : 2.35V @ 25µA
Chaje Gate (Qg) (Max) @ Vgs : 16nC @ 4.5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1350pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 55W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D-Pak
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

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