Nimewo Pati :
TPCC8093,L1Q
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
X35 PB-F POWER MOSFET TRANSISTOR
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
21A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
5.8 mOhm @ 10.5A, 4.5V
Vgs (th) (Max) @ Id :
1.2V @ 500µA
Chaje Gate (Qg) (Max) @ Vgs :
16nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds :
1860pF @ 10V
Disipasyon Pouvwa (Max) :
1.9W (Ta), 30W (Tc)
Operating Tanperati :
150°C
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-TSON Advance (3.3x3.3)