Toshiba Semiconductor and Storage - TPCC8093,L1Q

KEY Part #: K6421314

TPCC8093,L1Q Pricing (USD) [439480PC Stock]

  • 1 pcs$0.08416

Nimewo Pati:
TPCC8093,L1Q
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
X35 PB-F POWER MOSFET TRANSISTOR.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Arrays, Diodes - Bridge rèktifikateur, Modil pouvwa chofè, Transistors - IGBTs - Modil yo and Diodes - Zener - Arrays ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage TPCC8093,L1Q electronic components. TPCC8093,L1Q can be shipped within 24 hours after order. If you have any demands for TPCC8093,L1Q, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TPCC8093,L1Q Atribi pwodwi yo

Nimewo Pati : TPCC8093,L1Q
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : X35 PB-F POWER MOSFET TRANSISTOR
Seri : U-MOSVII
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 21A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V
RD sou (Max) @ Id, Vgs : 5.8 mOhm @ 10.5A, 4.5V
Vgs (th) (Max) @ Id : 1.2V @ 500µA
Chaje Gate (Qg) (Max) @ Vgs : 16nC @ 5V
Vgs (Max) : ±12V
Antre kapasite (Ciss) (Max) @ Vds : 1860pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.9W (Ta), 30W (Tc)
Operating Tanperati : 150°C
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-TSON Advance (3.3x3.3)
Pake / Ka : 8-PowerVDFN

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