FP50R12KE3BOSA1 Pricing (USD) [790PC Stock]
- 1 pcs$58.70938
- Nimewo Pati:
- FP50R12KE3BOSA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- IGBT MODULE 1200V 50A.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Single, Transistors - FETs, MOSFETs - RF, Diodes - Bridge rèktifikateur, Diodes - Rèkteur - Arrays, Diodes - Rèkteur - Single and Tiristors - SCR ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies FP50R12KE3BOSA1 electronic components. FP50R12KE3BOSA1 can be shipped within 24 hours after order. If you have any demands for FP50R12KE3BOSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FP50R12KE3BOSA1 Atribi pwodwi yo
Nimewo Pati :
FP50R12KE3BOSA1
Manifakti :
Infineon Technologies
Deskripsyon :
IGBT MODULE 1200V 50A
Seri :
*
Estati Pati :
Active
Kalite IGBT :
NPT
Nou konte genyen :
Single
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
75A
Pouvwa - Max :
280W
Vce (sou) (Max) @ Vge, Ic :
2.15V @ 15V, 50A
Kouran - Cutoff Pèseptè (Max) :
5mA
Antre kapasite (Cies) @ Vce :
3.5nF @ 25V
Antre :
Standard
NTC thermistor :
No
Operating Tanperati :
-40°C ~ 125°C (TJ)
Mounting Kalite :
Chassis Mount
Pake / Ka :
Module
Pake Aparèy Founisè :
Module
Dènye nouvèl
Ou ka enterese tou
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VS-ENQ030L120S
Vishay Semiconductor Diodes Division
IGBT 1200V 61A 216W EMIPAK-1B. Rectifiers 30A Neutral Point Clamp Topology
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