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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. NTR4003NT1G

ON Semiconductor - NTR4003NT1G

KEY Part #: K6419570

NTR4003NT1G Pricing (USD) [1859272PC Stock]

  • 1 pcs$0.02152
  • 3,000 pcs$0.02141
Nimewo Pati:
NTR4003NT1G
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 30V 500MA SOT-23.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Tiristors - SCR, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays and Transistors - IGBTs - Single ...
Avantaj konpetitif:
We specialize in ON Semiconductor NTR4003NT1G electronic components. NTR4003NT1G can be shipped within 24 hours after order. If you have any demands for NTR4003NT1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTR4003NT1G Atribi pwodwi yo

Nimewo Pati : NTR4003NT1G
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 30V 500MA SOT-23
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 500mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4V
RD sou (Max) @ Id, Vgs : 1.5 Ohm @ 10mA, 4V
Vgs (th) (Max) @ Id : 1.4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 1.15nC @ 5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 21pF @ 5V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 690mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-23-3 (TO-236)
Pake / Ka : TO-236-3, SC-59, SOT-23-3

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