FGA50N100BNTD2 Pricing (USD) [11002PC Stock]
- 1 pcs$3.74595
- 10 pcs$3.38414
- 100 pcs$2.80188
- Nimewo Pati:
- FGA50N100BNTD2
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- IGBT 1000V 50A 156W TO3P.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Single, Diodes - Rèkteur - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR, Transistors - IGBTs - Modil yo and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FGA50N100BNTD2 electronic components. FGA50N100BNTD2 can be shipped within 24 hours after order. If you have any demands for FGA50N100BNTD2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FGA50N100BNTD2 Atribi pwodwi yo
Nimewo Pati :
FGA50N100BNTD2
Manifakti :
ON Semiconductor
Deskripsyon :
IGBT 1000V 50A 156W TO3P
Seri :
-
Estati Pati :
Active
Kalite IGBT :
NPT and Trench
Voltage - Pèseptè ki emèt deba (Max) :
1000V
Kouran - Pèseptè (Ic) (Max) :
50A
Kouran - Pèseptè batman (Icm) :
200A
Vce (sou) (Max) @ Vge, Ic :
2.9V @ 15V, 60A
Pouvwa - Max :
156W
Oblije chanje enèji :
-
Kalite Antre :
Standard
Gate chaje :
257nC
Td (on / off) @ 25 ° C :
34ns/243ns
Kondisyon egzamen an :
600V, 60A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) :
75ns
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-3P-3, SC-65-3
Pake Aparèy Founisè :
TO-3P
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