IXYS - IXXX200N60B3

KEY Part #: K6422003

IXXX200N60B3 Pricing (USD) [5469PC Stock]

  • 1 pcs$7.53333

Nimewo Pati:
IXXX200N60B3
Manifakti:
IXYS
Detaye deskripsyon:
IGBT.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Single, Transistors - Objektif espesyal, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - RF and Transistors - FETs, MOSFETs - RF ...
Avantaj konpetitif:
We specialize in IXYS IXXX200N60B3 electronic components. IXXX200N60B3 can be shipped within 24 hours after order. If you have any demands for IXXX200N60B3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXXX200N60B3 Atribi pwodwi yo

Nimewo Pati : IXXX200N60B3
Manifakti : IXYS
Deskripsyon : IGBT
Seri : XPT™, GenX3™
Estati Pati : Active
Kalite IGBT : -
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 380A
Kouran - Pèseptè batman (Icm) : 900A
Vce (sou) (Max) @ Vge, Ic : 1.7V @ 15V, 100A
Pouvwa - Max : 1630W
Oblije chanje enèji : 2.85mJ (on), 4.4mJ (off)
Kalite Antre : Standard
Gate chaje : 315nC
Td (on / off) @ 25 ° C : 48ns/160ns
Kondisyon egzamen an : 360V, 100A, 1 Ohm, 15V
Ranvèse Tan Reverse (trr) : 100ns
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : PLUS247™-3