Renesas Electronics America - RJH1CV7DPK-00#T0

KEY Part #: K6422394

RJH1CV7DPK-00#T0 Pricing (USD) [12951PC Stock]

  • 1 pcs$3.18185
  • 10 pcs$2.84119
  • 25 pcs$2.55712

Nimewo Pati:
RJH1CV7DPK-00#T0
Manifakti:
Renesas Electronics America
Detaye deskripsyon:
IGBT 1200V 70A 320W TO-3P.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - Objektif espesyal ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RJH1CV7DPK-00#T0 Atribi pwodwi yo

Nimewo Pati : RJH1CV7DPK-00#T0
Manifakti : Renesas Electronics America
Deskripsyon : IGBT 1200V 70A 320W TO-3P
Seri : -
Estati Pati : Active
Kalite IGBT : Trench
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 70A
Kouran - Pèseptè batman (Icm) : -
Vce (sou) (Max) @ Vge, Ic : 2.3V @ 15V, 35A
Pouvwa - Max : 320W
Oblije chanje enèji : 3.2mJ (on), 2.5mJ (off)
Kalite Antre : Standard
Gate chaje : 166nC
Td (on / off) @ 25 ° C : 53ns/185ns
Kondisyon egzamen an : 600V, 35A, 5 Ohm, 15V
Ranvèse Tan Reverse (trr) : 200ns
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-3P-3, SC-65-3
Pake Aparèy Founisè : TO-3P