[3828PC Stock]
- Nimewo Pati:
- SI3588DV-T1-E3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N/P-CH 20V 2.5A 6TSOP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - TRIACs, Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - RF, Tiristors - DIACs, SIDACs, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Arrays and Diodes - Rèkteur - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SI3588DV-T1-E3 electronic components. SI3588DV-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI3588DV-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI3588DV-T1-E3 Atribi pwodwi yo
Nimewo Pati :
SI3588DV-T1-E3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N/P-CH 20V 2.5A 6TSOP
Seri :
TrenchFET®
Estati Pati :
Obsolete
FET Kalite :
N and P-Channel
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.5A, 570mA
RD sou (Max) @ Id, Vgs :
80 mOhm @ 3A, 4.5V
Vgs (th) (Max) @ Id :
450mV @ 250µA (Min)
Chaje Gate (Qg) (Max) @ Vgs :
7.5nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
-
Pouvwa - Max :
830mW, 83mW
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
SOT-23-6 Thin, TSOT-23-6
Pake Aparèy Founisè :
6-TSOP
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