Vishay Siliconix - SI1972DH-T1-E3

KEY Part #: K6524451

[3828PC Stock]


    Nimewo Pati:
    SI1972DH-T1-E3
    Manifakti:
    Vishay Siliconix
    Detaye deskripsyon:
    MOSFET 2N-CH 30V 1.3A SC70-6.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Modil pouvwa chofè, Transistors - FETs, MOSFETs - Single, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - RF and Transistors - Bipolè (BJT) - Single ...
    Avantaj konpetitif:
    We specialize in Vishay Siliconix SI1972DH-T1-E3 electronic components. SI1972DH-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI1972DH-T1-E3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI1972DH-T1-E3 Atribi pwodwi yo

    Nimewo Pati : SI1972DH-T1-E3
    Manifakti : Vishay Siliconix
    Deskripsyon : MOSFET 2N-CH 30V 1.3A SC70-6
    Seri : TrenchFET®
    Estati Pati : Obsolete
    FET Kalite : 2 N-Channel (Dual)
    Karakteristik FET : Standard
    Drenaj nan Voltage Sous (Vdss) : 30V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.3A
    RD sou (Max) @ Id, Vgs : 225 mOhm @ 1.3A, 10V
    Vgs (th) (Max) @ Id : 2.8V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 2.8nC @ 10V
    Antre kapasite (Ciss) (Max) @ Vds : 75pF @ 15V
    Pouvwa - Max : 1.25W
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : 6-TSSOP, SC-88, SOT-363
    Pake Aparèy Founisè : SC-70-6 (SOT-363)