Renesas Electronics America - RJK0652DPB-00#J5

KEY Part #: K6412732

RJK0652DPB-00#J5 Pricing (USD) [13343PC Stock]

  • 2,500 pcs$0.31128

Nimewo Pati:
RJK0652DPB-00#J5
Manifakti:
Renesas Electronics America
Detaye deskripsyon:
MOSFET N-CH 60V 35A LFPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - RF, Diodes - Bridge rèktifikateur, Diodes - Zener - Arrays, Transistors - JFETs, Transistors - Bipolè (BJT) - RF and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RJK0652DPB-00#J5 Atribi pwodwi yo

Nimewo Pati : RJK0652DPB-00#J5
Manifakti : Renesas Electronics America
Deskripsyon : MOSFET N-CH 60V 35A LFPAK
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 35A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 7 mOhm @ 17.5A, 10V
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : 29nC @ 4.5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 4100pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 55W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : LFPAK
Pake / Ka : SC-100, SOT-669