Nimewo Pati :
SQD50N05-11L_GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 50V 50A TO252
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
50V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
50A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
11 mOhm @ 45A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
52nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
2106pF @ 25V
Disipasyon Pouvwa (Max) :
75W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-252AA
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63