Vishay Siliconix - SQD50N05-11L_GE3

KEY Part #: K6419463

SQD50N05-11L_GE3 Pricing (USD) [113470PC Stock]

  • 1 pcs$0.32596
  • 2,000 pcs$0.30423

Nimewo Pati:
SQD50N05-11L_GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CH 50V 50A TO252.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
We specialize in Vishay Siliconix SQD50N05-11L_GE3 electronic components. SQD50N05-11L_GE3 can be shipped within 24 hours after order. If you have any demands for SQD50N05-11L_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQD50N05-11L_GE3 Atribi pwodwi yo

Nimewo Pati : SQD50N05-11L_GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CH 50V 50A TO252
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 50V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 50A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 11 mOhm @ 45A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 52nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2106pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 75W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-252AA
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63