Nimewo Pati :
GT50J121(Q)
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
IGBT 600V 50A 240W TO3P LH
Voltage - Pèseptè ki emèt deba (Max) :
600V
Kouran - Pèseptè (Ic) (Max) :
50A
Kouran - Pèseptè batman (Icm) :
100A
Vce (sou) (Max) @ Vge, Ic :
2.45V @ 15V, 50A
Oblije chanje enèji :
1.3mJ (on), 1.34mJ (off)
Td (on / off) @ 25 ° C :
90ns/300ns
Kondisyon egzamen an :
300V, 50A, 13 Ohm, 15V
Ranvèse Tan Reverse (trr) :
-
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-3P(LH)