IXTA110N12T2 Pricing (USD) [20874PC Stock]
- 1 pcs$2.17265
- 10 pcs$1.93908
- 100 pcs$1.59005
- 500 pcs$1.28755
- 1,000 pcs$1.03020
- Nimewo Pati:
- IXTA110N12T2
- Manifakti:
- IXYS
- Detaye deskripsyon:
- 120V/110A TRENCHT2 POWER MOSFET.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Single, Tiristors - SCR - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Objektif espesyal, Diodes - Bridge rèktifikateur, Tiristors - SCR and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in IXYS IXTA110N12T2 electronic components. IXTA110N12T2 can be shipped within 24 hours after order. If you have any demands for IXTA110N12T2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTA110N12T2 Atribi pwodwi yo
Nimewo Pati :
IXTA110N12T2
Manifakti :
IXYS
Deskripsyon :
120V/110A TRENCHT2 POWER MOSFET
Seri :
TrenchT2™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
120V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
110A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
14 mOhm @ 55A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
120nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
6570pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
517W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-263 (IXTA)
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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