Infineon Technologies - IPI024N06N3GXKSA1

KEY Part #: K6406987

IPI024N06N3GXKSA1 Pricing (USD) [28338PC Stock]

  • 1 pcs$1.39261
  • 10 pcs$1.25908
  • 100 pcs$0.95979
  • 500 pcs$0.74649
  • 1,000 pcs$0.61852

Nimewo Pati:
IPI024N06N3GXKSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 60V 120A.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - RF, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Single, Tiristors - SCR, Transistors - FETs, MOSFETs - RF and Diodes - RF ...
Avantaj konpetitif:
We specialize in Infineon Technologies IPI024N06N3GXKSA1 electronic components. IPI024N06N3GXKSA1 can be shipped within 24 hours after order. If you have any demands for IPI024N06N3GXKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPI024N06N3GXKSA1 Atribi pwodwi yo

Nimewo Pati : IPI024N06N3GXKSA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 60V 120A
Seri : OptiMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 120A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 2.4 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id : 4V @ 196µA
Chaje Gate (Qg) (Max) @ Vgs : 275nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 23000pF @ 30V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 250W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PG-TO262-3-1
Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA