Nimewo Pati :
IPI024N06N3GXKSA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 60V 120A
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
120A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
2.4 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
4V @ 196µA
Chaje Gate (Qg) (Max) @ Vgs :
275nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
23000pF @ 30V
Disipasyon Pouvwa (Max) :
250W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-TO262-3-1
Pake / Ka :
TO-262-3 Long Leads, I²Pak, TO-262AA