TSM80N1R2CL C0G Pricing (USD) [43700PC Stock]
- 1 pcs$0.89473
- Nimewo Pati:
- TSM80N1R2CL C0G
- Manifakti:
- Taiwan Semiconductor Corporation
- Detaye deskripsyon:
- MOSFET N-CH 800V 5.5A TO262S.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Diodes - Bridge rèktifikateur, Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Single, Transistors - JFETs, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Single and Transistors - Bipolè (BJT) - Arrays ...
- Avantaj konpetitif:
- We specialize in Taiwan Semiconductor Corporation TSM80N1R2CL C0G electronic components. TSM80N1R2CL C0G can be shipped within 24 hours after order. If you have any demands for TSM80N1R2CL C0G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM80N1R2CL C0G Atribi pwodwi yo
Nimewo Pati :
TSM80N1R2CL C0G
Manifakti :
Taiwan Semiconductor Corporation
Deskripsyon :
MOSFET N-CH 800V 5.5A TO262S
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5.5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1.2 Ohm @ 1.8A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
19.4nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
685pF @ 100V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
110W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-262S (I2PAK)
Pake / Ka :
TO-262-3 Short Leads, I²Pak
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