Renesas Electronics America - RJK03M2DPA-00#J5A

KEY Part #: K6393855

RJK03M2DPA-00#J5A Pricing (USD) [132017PC Stock]

  • 1 pcs$0.29867
  • 3,000 pcs$0.29718

Nimewo Pati:
RJK03M2DPA-00#J5A
Manifakti:
Renesas Electronics America
Detaye deskripsyon:
MOSFET N-CH 30V 45A WPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - RF, Modil pouvwa chofè and Transistors - IGBTs - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RJK03M2DPA-00#J5A Atribi pwodwi yo

Nimewo Pati : RJK03M2DPA-00#J5A
Manifakti : Renesas Electronics America
Deskripsyon : MOSFET N-CH 30V 45A WPAK
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 45A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 2.8 mOhm @ 22.5A, 10V
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : 21.2nC @ 4.5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 3850pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 40W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-WPAK
Pake / Ka : 8-WFDFN Exposed Pad