Infineon Technologies - IRG4BC30KD-STRR

KEY Part #: K6424556

[9268PC Stock]


    Nimewo Pati:
    IRG4BC30KD-STRR
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    IGBT 600V 28A 100W D2PAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Single, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - RF, Diodes - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Diodes - Bridge rèktifikateur ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies IRG4BC30KD-STRR electronic components. IRG4BC30KD-STRR can be shipped within 24 hours after order. If you have any demands for IRG4BC30KD-STRR, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRG4BC30KD-STRR Atribi pwodwi yo

    Nimewo Pati : IRG4BC30KD-STRR
    Manifakti : Infineon Technologies
    Deskripsyon : IGBT 600V 28A 100W D2PAK
    Seri : -
    Estati Pati : Obsolete
    Kalite IGBT : -
    Voltage - Pèseptè ki emèt deba (Max) : 600V
    Kouran - Pèseptè (Ic) (Max) : 28A
    Kouran - Pèseptè batman (Icm) : 58A
    Vce (sou) (Max) @ Vge, Ic : 2.7V @ 15V, 16A
    Pouvwa - Max : 100W
    Oblije chanje enèji : 600µJ (on), 580µJ (off)
    Kalite Antre : Standard
    Gate chaje : 67nC
    Td (on / off) @ 25 ° C : 60ns/160ns
    Kondisyon egzamen an : 480V, 16A, 23 Ohm, 15V
    Ranvèse Tan Reverse (trr) : 42ns
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    Pake Aparèy Founisè : D2PAK