SI7172ADP-T1-RE3 Pricing (USD) [164336PC Stock]
- 1 pcs$0.22507
- Nimewo Pati:
- SI7172ADP-T1-RE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CHAN 200V POWERPAK SO-8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Diodes - RF, Transistors - Pwogramasyon Unijunction, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR, Diodes - Rèkteur - Single, Tiristors - SCR - Modil yo and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SI7172ADP-T1-RE3 electronic components. SI7172ADP-T1-RE3 can be shipped within 24 hours after order. If you have any demands for SI7172ADP-T1-RE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI7172ADP-T1-RE3 Atribi pwodwi yo
Nimewo Pati :
SI7172ADP-T1-RE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CHAN 200V POWERPAK SO-8
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
-
Drive Voltage (Max Rds Sou, Min RDS Sou) :
7.5V, 10V
RD sou (Max) @ Id, Vgs :
50 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
3.1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
19.5nC @ 10V
Vgs (Max) :
-
Antre kapasite (Ciss) (Max) @ Vds :
1110pF @ 100V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
-
Operating Tanperati :
-55°C ~ 125°C
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PowerPAK® SO-8
Pake / Ka :
PowerPAK® SO-8
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