Infineon Technologies - IRFS4321-7PPBF

KEY Part #: K6402725

[2604PC Stock]


    Nimewo Pati:
    IRFS4321-7PPBF
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    MOSFET N-CH 150V 86A D2PAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Pwogramasyon Unijunction, Transistors - Objektif espesyal, Diodes - Zener - Single, Tiristors - SCR - Modil yo, Transistors - IGBTs - Modil yo, Tiristors - SCR and Diodes - Rèkteur - Arrays ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies IRFS4321-7PPBF electronic components. IRFS4321-7PPBF can be shipped within 24 hours after order. If you have any demands for IRFS4321-7PPBF, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRFS4321-7PPBF Atribi pwodwi yo

    Nimewo Pati : IRFS4321-7PPBF
    Manifakti : Infineon Technologies
    Deskripsyon : MOSFET N-CH 150V 86A D2PAK
    Seri : HEXFET®
    Estati Pati : Discontinued at Digi-Key
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 150V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 86A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 14.7 mOhm @ 34A, 10V
    Vgs (th) (Max) @ Id : 5V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 110nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 4460pF @ 50V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 350W (Tc)
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : D2PAK (7-Lead)
    Pake / Ka : TO-263-7, D²Pak (6 Leads + Tab)

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