SQS411ENW-T1_GE3 Pricing (USD) [250794PC Stock]
- 1 pcs$0.14748
- Nimewo Pati:
- SQS411ENW-T1_GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET P-CH 40V PPAK 1212-8W.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR - Modil yo, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Single, Tiristors - SCR and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SQS411ENW-T1_GE3 electronic components. SQS411ENW-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQS411ENW-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQS411ENW-T1_GE3 Atribi pwodwi yo
Nimewo Pati :
SQS411ENW-T1_GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET P-CH 40V PPAK 1212-8W
Seri :
Automotive, AEC-Q101, TrenchFET®
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
16A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
27.3 mOhm @ 8A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
50nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
3191pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
53.6W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PowerPAK® 1212-8W
Pake / Ka :
PowerPAK® 1212-8W
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