Nimewo Pati :
SI7858BDP-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 12V 40A PPAK SO-8
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
40A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 4.5V
RD sou (Max) @ Id, Vgs :
2.5 mOhm @ 15A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
84nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
5760pF @ 6V
Disipasyon Pouvwa (Max) :
5W (Ta), 48W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PowerPAK® SO-8
Pake / Ka :
PowerPAK® SO-8