Vishay Siliconix - SI7858BDP-T1-GE3

KEY Part #: K6419553

SI7858BDP-T1-GE3 Pricing (USD) [118801PC Stock]

  • 1 pcs$0.31134
  • 3,000 pcs$0.29235

Nimewo Pati:
SI7858BDP-T1-GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CH 12V 40A PPAK SO-8.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Tiristors - SCR, Diodes - Zener - Single, Tiristors - TRIACs, Modil pouvwa chofè, Transistors - FETs, MOSFETs - Single, Transistors - JFETs and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SI7858BDP-T1-GE3 electronic components. SI7858BDP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7858BDP-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI7858BDP-T1-GE3 Atribi pwodwi yo

Nimewo Pati : SI7858BDP-T1-GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CH 12V 40A PPAK SO-8
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 40A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V
RD sou (Max) @ Id, Vgs : 2.5 mOhm @ 15A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 84nC @ 4.5V
Vgs (Max) : ±8V
Antre kapasite (Ciss) (Max) @ Vds : 5760pF @ 6V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 5W (Ta), 48W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PowerPAK® SO-8
Pake / Ka : PowerPAK® SO-8