IXBT42N170A Pricing (USD) [4933PC Stock]
- 1 pcs$9.24683
- 30 pcs$9.20083
- Nimewo Pati:
- IXBT42N170A
- Manifakti:
- IXYS
- Detaye deskripsyon:
- IGBT 1700V 42A 357W TO268.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Arrays, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Single, Diodes - Zener - Arrays and Diodes - Varyab kapasite (Varicaps, Varactors) ...
- Avantaj konpetitif:
- We specialize in IXYS IXBT42N170A electronic components. IXBT42N170A can be shipped within 24 hours after order. If you have any demands for IXBT42N170A, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXBT42N170A Atribi pwodwi yo
Nimewo Pati :
IXBT42N170A
Manifakti :
IXYS
Deskripsyon :
IGBT 1700V 42A 357W TO268
Seri :
BIMOSFET™
Estati Pati :
Active
Kalite IGBT :
-
Voltage - Pèseptè ki emèt deba (Max) :
1700V
Kouran - Pèseptè (Ic) (Max) :
42A
Kouran - Pèseptè batman (Icm) :
265A
Vce (sou) (Max) @ Vge, Ic :
6V @ 15V, 21A
Pouvwa - Max :
357W
Oblije chanje enèji :
3.43mJ (on), 430µJ (off)
Kalite Antre :
Standard
Gate chaje :
188nC
Td (on / off) @ 25 ° C :
19ns/200ns
Kondisyon egzamen an :
850V, 21A, 1 Ohm, 15V
Ranvèse Tan Reverse (trr) :
330ns
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Pake Aparèy Founisè :
TO-268
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