IXYS - IXFH110N15T2

KEY Part #: K6395010

IXFH110N15T2 Pricing (USD) [18229PC Stock]

  • 1 pcs$2.61298
  • 30 pcs$2.59998

Nimewo Pati:
IXFH110N15T2
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 150V 110A TO-247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Diodes - Zener - Single, Diodes - Rèkteur - Arrays, Diodes - Rèkteur - Single, Tiristors - SCR - Modil yo, Transistors - JFETs, Modil pouvwa chofè and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
We specialize in IXYS IXFH110N15T2 electronic components. IXFH110N15T2 can be shipped within 24 hours after order. If you have any demands for IXFH110N15T2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFH110N15T2 Atribi pwodwi yo

Nimewo Pati : IXFH110N15T2
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 150V 110A TO-247
Seri : TrenchT2™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 150V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 110A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 13 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id : 4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 150nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 8600pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 480W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247AD (IXFH)
Pake / Ka : TO-247-3